DMTH8008LPSQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 91.42 грн |
| 10+ | 55.42 грн |
| 100+ | 36.62 грн |
| 500+ | 26.79 грн |
| 1000+ | 24.35 грн |
Відгуки про товар
Написати відгук
Технічний опис DMTH8008LPSQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 91A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V, Power Dissipation (Max): 1.6W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції DMTH8008LPSQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMTH8008LPSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 64A Pulsed drain current: 360A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 41.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 2500 шт |
товару немає в наявності |
||
|
|
DMTH8008LPSQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Power Dissipation (Max): 1.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
|
 |
DMTH8008LPSQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K |
товару немає в наявності |
|
| DMTH8008LPSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 64A; Idm: 360A; 3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 64A Pulsed drain current: 360A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 41.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |