DMTH8012LK3Q-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.23 грн |
| 5000+ | 30.53 грн |
| 7500+ | 30.48 грн |
Відгуки про товар
Написати відгук
Технічний опис DMTH8012LK3Q-13 Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.6W (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції DMTH8012LK3Q-13 за ціною від 32.99 грн до 54.24 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMTH8012LK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 131494 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
DMTH8012LK3Q-13 | Diodes Incorporated |
MOSFETs 80V 175c N-Ch FET 16mOhm 10Vgs 50A |
на замовлення 10175 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMTH8012LK3Q-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V
Qualification: AEC-Q101
на замовлення 131494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.24 грн |
| 10+ | 46.49 грн |
| 100+ | 40.51 грн |
| 500+ | 34.69 грн |
| 1000+ | 32.99 грн |
| DMTH8012LK3Q-13 |
|
Виробник: Diodes Incorporated
MOSFETs 80V 175c N-Ch FET 16mOhm 10Vgs 50A
MOSFETs 80V 175c N-Ch FET 16mOhm 10Vgs 50A
на замовлення 10175 шт:
термін постачання 21-30 дні (днів)