DMTH8028LPSW-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: 13 inch reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Drain-source voltage: 80V
Pulsed drain current: 166.8A
Drain current: 29.5A
Gate charge: 10.4nC
On-state resistance: 41mΩ
Polarisation: unipolar
Case: PowerDI5060-8
Power dissipation: 3.9W
кількість в упаковці: 2500 шт
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Технічний опис DMTH8028LPSW-13 DIODES INCORPORATED
Description: MOSFET BVDSS: 61V~100V POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41.7A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Power Dissipation (Max): 3.9W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V.
Інші пропозиції DMTH8028LPSW-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DMTH8028LPSW-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41.7A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Power Dissipation (Max): 3.9W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V |
товару немає в наявності |
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| DMTH8028LPSW-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V~100V PowerDI5060-8/SWP T&R 2.5K |
товару немає в наявності |
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| DMTH8028LPSW-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W Mounting: SMD Type of transistor: N-MOSFET Kind of package: 13 inch reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Drain-source voltage: 80V Pulsed drain current: 166.8A Drain current: 29.5A Gate charge: 10.4nC On-state resistance: 41mΩ Polarisation: unipolar Case: PowerDI5060-8 Power dissipation: 3.9W |
товару немає в наявності |