DMTH8028LPSWQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.7A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 3.9W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V
Qualification: AEC-Q101
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 16.64 грн |
| 5000+ | 15.18 грн |
| 12500+ | 14.05 грн |
| 25000+ | 13.06 грн |
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Технічний опис DMTH8028LPSWQ-13 Diodes Incorporated
Description: DIODES INC. - DMTH8028LPSWQ-13 - Leistungs-MOSFET, n-Kanal, 80 V, 0.018 ohm, PowerDI 5060, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80V, rohsCompliant: YES, Dauer-Drainstrom Id: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, usEccn: EAR99, Verlustleistung Pd: 3.9W, Gate-Source-Schwellenspannung, max.: 2.5V, euEccn: NLR, Verlustleistung: 3.9W, Bauform - Transistor: PowerDI 5060, Qualifizierungsstandard der Automobilindustrie: AEC-Q101, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.018ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.018ohm, SVHC: Lead (14-Jun-2023).
Інші пропозиції DMTH8028LPSWQ-13 за ціною від 16.22 грн до 54.58 грн
| Фото | Назва | Виробник | Інформація |
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DMTH8028LPSWQ-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMTH8028LPSWQ-13 - Leistungs-MOSFET, n-Kanal, 80 V, 0.018 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 3.9W Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 3.9W Bauform - Transistor: PowerDI 5060 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.018ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: Lead (14-Jun-2023) |
на замовлення 29997 шт: термін постачання 21-31 дні (днів) |
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DMTH8028LPSWQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41.7A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Power Dissipation (Max): 3.9W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 162310 шт: термін постачання 21-31 дні (днів) |
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DMTH8028LPSWQ-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMTH8028LPSWQ-13 - Leistungs-MOSFET, n-Kanal, 80 V, 0.018 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 3.9W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: Lead (14-Jun-2023) |
на замовлення 29997 шт: термін постачання 21-31 дні (днів) |
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| DMTH8028LPSWQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W Mounting: SMD Drain-source voltage: 80V Drain current: 29.5A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 3.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 166.8A Case: PowerDI5060-8 кількість в упаковці: 2500 шт |
товар відсутній |
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| DMTH8028LPSWQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W Mounting: SMD Drain-source voltage: 80V Drain current: 29.5A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 3.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 166.8A Case: PowerDI5060-8 |
товар відсутній |