DMTH8030LPDWQ-13 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 4+ | 100.92 грн |
| 10+ | 66.32 грн |
| 100+ | 39.10 грн |
| 500+ | 30.73 грн |
| 1000+ | 28.06 грн |
| 2500+ | 24.47 грн |
| 5000+ | 23.77 грн |
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Технічний опис DMTH8030LPDWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50, Part Status: Active, Supplier Device Package: PowerDI5060-8 (Type UXD), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V, Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V, Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc), Drain to Source Voltage (Vdss): 80V, Power - Max: 3.1W (Ta), 41W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMTH8030LPDWQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMTH8030LPDWQ-13 | Diodes Incorporated |
 Description: MOSFET BVDSS: 61V~100V POWERDI50Part Status: Active Supplier Device Package: PowerDI5060-8 (Type UXD) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc) Drain to Source Voltage (Vdss): 80V Power - Max: 3.1W (Ta), 41W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| DMTH8030LPDWQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 3.1W (Ta), 41W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V POWERDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 3.1W (Ta), 41W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.