DMWSH120H90SM3 Diodes Incorporated

Description: SICFET N-CH 1200V TO-247, Packaging: Tube, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 3.5V @ 5mA, Power Dissipation (Max): 246W (Tc), Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V.