| Кількість | Ціна |
|---|---|
| 2+ | 217.42 грн |
| 10+ | 194.10 грн |
| 25+ | 155.42 грн |
| 100+ | 146.98 грн |
| 490+ | 144.17 грн |
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Технічний опис DN2625DK6-G Microchip Technology
Description: MICROCHIP - DN2625DK6-G - Dual-MOSFET, n-Kanal, 250 V, 250 V, 1.1 A, 1.1 A, 3.5 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 1.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 250V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 1.1A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 250V, euEccn: NLR, Bauform - Transistor: DFN, Anzahl der Pins: 8Pin(s), Produktpalette: DN2625 Series, Drain-Source-Durchgangswiderstand, n-Kanal: 3.5ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: -, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (04-Feb-2026).
Інші пропозиції DN2625DK6-G за ціною від 164.97 грн до 227.85 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DN2625DK6-G | MICROCHIP |
 Description: MICROCHIP - DN2625DK6-G - Dual-MOSFET, n-Kanal, 250 V, 250 V, 1.1 A, 1.1 A, 3.5 ohmtariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 250V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 1.1A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 250V euEccn: NLR Bauform - Transistor: DFN Anzahl der Pins: 8Pin(s) Produktpalette: DN2625 Series Drain-Source-Durchgangswiderstand, n-Kanal: 3.5ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: - Betriebstemperatur, max.: 150°C SVHC: No SVHC (04-Feb-2026) |
на замовлення 1517 шт: термін постачання 21-31 дні (днів) |
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DN2625DK6-G | Microchip Technology |
Description: MOSFET 2N-CH 250V 1.1A 8DFN Packaging: Tray Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1.1A Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 0V Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V FET Feature: Depletion Mode Supplier Device Package: 8-DFN (5x5) Part Status: Active |
на замовлення 443 шт: термін постачання 21-31 дні (днів) |
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| DN2625DK6-G |
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Виробник: MICROCHIP
Description: MICROCHIP - DN2625DK6-G - Dual-MOSFET, n-Kanal, 250 V, 250 V, 1.1 A, 1.1 A, 3.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 1.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 250V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 1.1A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 250V
euEccn: NLR
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: DN2625 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3.5ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: -
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (04-Feb-2026)
Description: MICROCHIP - DN2625DK6-G - Dual-MOSFET, n-Kanal, 250 V, 250 V, 1.1 A, 1.1 A, 3.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 1.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 250V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 1.1A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 250V
euEccn: NLR
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: DN2625 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 3.5ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: -
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (04-Feb-2026)
на замовлення 1517 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 223.17 грн |
| 25+ | 210.04 грн |
| 100+ | 196.09 грн |
| 490+ | 169.89 грн |
| DN2625DK6-G |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 250V 1.1A 8DFN
Packaging: Tray
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 0V
Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V
FET Feature: Depletion Mode
Supplier Device Package: 8-DFN (5x5)
Part Status: Active
Description: MOSFET 2N-CH 250V 1.1A 8DFN
Packaging: Tray
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 0V
Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V
FET Feature: Depletion Mode
Supplier Device Package: 8-DFN (5x5)
Part Status: Active
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 227.85 грн |
| 25+ | 182.66 грн |
| 100+ | 164.97 грн |