DNA30EM2200PZ-TRL IXYS
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Технічний опис DNA30EM2200PZ-TRL IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA, Current - Reverse Leakage @ Vr: 40 µA @ 2200 V, Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 2200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-263AA, Current - Average Rectified (Io): 30A, Capacitance @ Vr, F: 7pF @ 700V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції DNA30EM2200PZ-TRL за ціною від 204.42 грн до 382.88 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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DNA30EM2200PZ-TRL | IXYS |
Description: DIODE GEN PURP 2.2KV 30A TO263AA Current - Reverse Leakage @ Vr: 40 µA @ 2200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Voltage - DC Reverse (Vr) (Max): 2200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AA Current - Average Rectified (Io): 30A Capacitance @ Vr, F: 7pF @ 700V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1151 шт: термін постачання 21-31 дні (днів) |
|
| DNA30EM2200PZ-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1151 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 382.88 грн |
| 10+ | 248.52 грн |
| 100+ | 204.42 грн |