DRA2123E0L Panasonic Electronic Components
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 50V 0.1A MINI3
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: MINI3-G3-B
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис DRA2123E0L Panasonic Electronic Components
Description: TRANS PREBIAS PNP 50V 0.1A MINI3, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: MINI3-G3-B, DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції DRA2123E0L
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DRA2123E0L | Виробник : Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 50V 0.1A MINI3 Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: MINI3-G3-B DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 5mA, 10V |
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| DRA2123E0L | Виробник : Panasonic |
 Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES GL WNG 2.9x2.8mm |
товару немає в наявності |