DRA3123Y0L Panasonic Electronic Components
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 100MW SSSMINI3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSSMini3-F2-B
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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Технічний опис DRA3123Y0L Panasonic Electronic Components
Description: TRANS PREBIAS PNP 100MW SSSMINI3, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 2.2 kOhms, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SSSMini3-F2-B, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Інші пропозиції DRA3123Y0L
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DRA3123Y0L | Виробник : Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 100MW SSSMINI3 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SSSMini3-F2-B DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
товару немає в наявності |
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| DRA3123Y0L | Виробник : Panasonic |
 Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 1.2x1.2mm |
товару немає в наявності |