Технічний опис DS1220Y-200IND DALLAS
Description: IC NVSRAM 16KBIT PARALLEL 24EDIP, DigiKey Programmable: Not Verified, Memory Organization: 2K x 8, Access Time: 200 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 200ns, Supplier Device Package: 24-EDIP, Memory Format: NVSRAM, Technology: NVSRAM (Non-Volatile SRAM), Voltage - Supply: 4.5V ~ 5.5V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 16Kbit, Mounting Type: Through Hole, Package / Case: 24-DIP Module (0.600", 15.24mm), Packaging: Tube.
Інші пропозиції DS1220Y-200IND
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DS1220Y-200IND+ | Виробник : Analog Devices Inc./Maxim Integrated |
 Description: IC NVSRAM 16KBIT PARALLEL 24EDIPDigiKey Programmable: Not Verified Memory Organization: 2K x 8 Access Time: 200 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 200ns Supplier Device Package: 24-EDIP Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Through Hole Package / Case: 24-DIP Module (0.600", 15.24mm) Packaging: Tube |
товару немає в наявності |