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| 1+ | 8275.57 грн |
| 11+ | 7344.10 грн |
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| 55+ | 6172.28 грн |
| 110+ | 5978.59 грн |
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Технічний опис DS1250AB-100IND+ Maxim Integrated
Description: IC NVSRAM 4MBIT PARALLEL 32EDIP, DigiKey Programmable: Not Verified, Memory Organization: 512K x 8, Access Time: 100 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 100ns, Supplier Device Package: 32-EDIP, Memory Format: NVSRAM, Technology: NVSRAM (Non-Volatile SRAM), Voltage - Supply: 4.75V ~ 5.25V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 4Mbit, Mounting Type: Through Hole, Package / Case: 32-DIP Module (0.600", 15.24mm), Packaging: Tube.
Інші пропозиції DS1250AB-100IND+
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DS1250AB-100IND | Виробник : DALLAS |
 DIP-32 08+09+ |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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DS1250AB-100IND | Виробник : Analog Devices Inc./Maxim Integrated |
Description: IC NVSRAM 4MBIT PARALLEL 32EDIP DigiKey Programmable: Not Verified Memory Organization: 512K x 8 Access Time: 100 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 100ns Supplier Device Package: 32-EDIP Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Mbit Mounting Type: Through Hole Package / Case: 32-DIP Module (0.600", 15.24mm) Packaging: Tube |
товару немає в наявності |
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DS1250AB-100IND+ | Виробник : Analog Devices Inc./Maxim Integrated |
Description: IC NVSRAM 4MBIT PARALLEL 32EDIP Packaging: Tube Package / Case: 32-DIP Module (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.75V ~ 5.25V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-EDIP Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
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DS1250AB-100IND+ | Виробник : Analog Devices Inc./Maxim Integrated |
Description: IC NVSRAM 4MBIT PARALLEL 32EDIP DigiKey Programmable: Not Verified Memory Organization: 512K x 8 Access Time: 100 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 100ns Supplier Device Package: 32-EDIP Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Mbit Mounting Type: Through Hole Package / Case: 32-DIP Module (0.600", 15.24mm) Packaging: Tube |
товару немає в наявності |
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DS1250AB-100IND+ | Виробник : Analog Devices / Maxim Integrated |
NVRAM 4096k Nonvolatile SRAM |
товару немає в наявності |