DSC04C065D1-13 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 3+ | 125.53 грн |
| 10+ | 78.61 грн |
| 100+ | 45.85 грн |
| 500+ | 36.22 грн |
| 1000+ | 33.12 грн |
| 2500+ | 31.22 грн |
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Технічний опис DSC04C065D1-13 Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 150pF @ 100mV, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-252 (Type WX), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 170 µA @ 650 V.
Інші пропозиції DSC04C065D1-13 за ціною від 35.90 грн до 128.96 грн
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DSC04C065D1-13 | Diodes Incorporated |
 Description: DIODE SIL CARBIDE 650V 4A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 150pF @ 100mV, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
на замовлення 2230 шт: термін постачання 21-31 дні (днів) |
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| DSC04C065D1-13 |
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Виробник: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
на замовлення 2230 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 128.96 грн |
| 10+ | 78.93 грн |
| 100+ | 52.96 грн |
| 500+ | 39.26 грн |
| 1000+ | 35.90 грн |