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DSEI12-12AZ-TRL

DSEI12-12AZ-TRL IXYS


media?resourcetype=datasheets&itemid=3b99ded9-82dc-4699-ac8c-df4ed6bc2074&filename=littelfuse%2520power%2520semiconductors%2520dsei12-12az%2520datasheet.pdf Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 11A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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Технічний опис DSEI12-12AZ-TRL IXYS

Description: DIODE GEN PURP 1.2KV 11A TO263HV, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 6pF @ 600V, 1MHz, Current - Average Rectified (Io): 11A, Supplier Device Package: TO-263HV, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A, Current - Reverse Leakage @ Vr: 250 µA @ 1200 V.

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DSEI12-12AZ-TRL DSEI12-12AZ-TRL Виробник : IXYS media-3320287.pdf Discrete Semiconductor Modules PWR DISC-FRED
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