DSS4310FJAWQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Bipolar Transistors - BJT SS Low Sat Transistor W-DFN2020-3/SWP T&R 3K
| Кількість | Ціна |
|---|---|
| 5+ | 71.34 грн |
| 10+ | 50.51 грн |
| 100+ | 27.26 грн |
| 500+ | 18.83 грн |
| 1000+ | 15.83 грн |
| 3000+ | 11.50 грн |
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Технічний опис DSS4310FJAWQ-7 Diodes Incorporated
Description: SS LOW SAT TRANSISTOR W-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 110mV @ 30mA, 3A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 325 @ 500mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: 8-SO, Grade: Automotive, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 10 V, Power - Max: 695 mW, Qualification: AEC-Q101.
Інші пропозиції DSS4310FJAWQ-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DSS4310FJAWQ-7 | Виробник : Diodes Incorporated |
Description: SS LOW SAT TRANSISTOR W-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 110mV @ 30mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 325 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SO Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 10 V Power - Max: 695 mW Qualification: AEC-Q101 |
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