DSS45160FDB-7 Diodes Incorporated


DSS45160FDB.pdf
Виробник: Diodes Incorporated
Bipolar Transistors - BJT SS Low Sat Transistor
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термін постачання 21-30 дні (днів)
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Технічний опис DSS45160FDB-7 Diodes Incorporated

Description: TRANS NPN/PNP 60V U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 405mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V, Frequency - Transition: 175MHz, 65MHz, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.

Інші пропозиції DSS45160FDB-7

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
DSS45160FDB-7 DSS45160FDB-7 Diodes Incorporated DSS45160FDB.pdf Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
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DSS45160FDB-7 DSS45160FDB-7 Diodes Incorporated DSS45160FDB.pdf Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
товару немає в наявності
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DSS45160FDB-7 DIODES INCORPORATED DSS45160FDB.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W
Case: U-DFN2020-6
Polarisation: bipolar
Kind of transistor: complementary pair
Pulsed collector current: 1.5A
Type of transistor: NPN / PNP
Current gain: 70...430
Kind of package: reel; tape
Frequency: 90...175MHz
Collector current: 1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 2.47W
товару немає в наявності
В кошику  од. на суму  грн.
DSS45160FDB-7 DSS45160FDB.pdf
Виробник: Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DSS45160FDB-7 DSS45160FDB.pdf
Виробник: Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
DSS45160FDB-7 DSS45160FDB.pdf
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W
Case: U-DFN2020-6
Polarisation: bipolar
Kind of transistor: complementary pair
Pulsed collector current: 1.5A
Type of transistor: NPN / PNP
Current gain: 70...430
Kind of package: reel; tape
Frequency: 90...175MHz
Collector current: 1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 2.47W
товару немає в наявності
В кошику  од. на суму  грн.