DTA115EMFHAT2L Rohm Semiconductor
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2703+ | 4.58 грн |
| 2783+ | 4.45 грн |
| 5000+ | 4.33 грн |
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Технічний опис DTA115EMFHAT2L Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V, Supplier Device Package: VMT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms.
Інші пропозиції DTA115EMFHAT2L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DTA115EMFHAT2L | Виробник : Rohm Semiconductor |
 Description: PNP DIGITAL TRANSISTOR (CORRESPOPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
товару немає в наявності |
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DTA115EMFHAT2L | Виробник : Rohm Semiconductor |
Description: PNP DIGITAL TRANSISTOR (CORRESPO Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
товару немає в наявності |
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DTA115EMFHAT2L | Виробник : ROHM Semiconductor |
Digital Transistors PNP, SOT-723, R1=R2 Potential Divider Type Digital Transistor (Bias Resistor Built-in Transistor) |
товару немає в наявності |