DTA123YCAT116 ROHM SEMICONDUCTOR
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.95 грн |
| 87+ | 4.82 грн |
| 129+ | 3.24 грн |
| 500+ | 2.55 грн |
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Технічний опис DTA123YCAT116 ROHM SEMICONDUCTOR
Description: TRANS PREBIAS PNP 50V 0.1A SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V, Supplier Device Package: SST3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.
Інші пропозиції DTA123YCAT116 за ціною від 2.69 грн до 15.95 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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DTA123YCAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 1414 шт: термін постачання 21-31 дні (днів) |
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DTA123YCAT116 | ROHM Semiconductor |
Digital Transistors PNP -100mA -50V w/bias resistor |
на замовлення 1177 шт: термін постачання 21-30 дні (днів) |
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| DTA123YCAT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 1414 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.53 грн |
| 33+ | 9.12 грн |
| 100+ | 5.65 грн |
| 500+ | 3.88 грн |
| 1000+ | 3.42 грн |
| DTA123YCAT116 |
|
Виробник: ROHM Semiconductor
Digital Transistors PNP -100mA -50V w/bias resistor
Digital Transistors PNP -100mA -50V w/bias resistor
на замовлення 1177 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 15.95 грн |
| 34+ | 9.53 грн |
| 100+ | 5.11 грн |
| 500+ | 3.73 грн |
| 1000+ | 3.52 грн |
| 3000+ | 2.69 грн |