DTC043XMT2L Rohm Semiconductor
на замовлення 5206 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3425+ | 3.42 грн |
| 3522+ | 3.32 грн |
| 5000+ | 3.23 грн |
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Технічний опис DTC043XMT2L Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (WITH BUI, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Supplier Device Package: VMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Інші пропозиції DTC043XMT2L за ціною від 2 грн до 19.55 грн
| Фото | Назва | Виробник | Інформація |
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DTC043XMT2L | Виробник : Rohm Semiconductor |
 Description: NPN DIGITAL TRANSISTOR (WITH BUIPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 7732 шт: термін постачання 21-31 дні (днів) |
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DTC043XMT2L | Виробник : ROHM Semiconductor |
Digital Transistors NPN Digital transistor (with built-in resistors). These are the standard products of "digital transistors" which ROHM invented and marketed first in the world. |
на замовлення 3493 шт: термін постачання 21-30 дні (днів) |
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DTC043XMT2L | Виробник : Rohm Semiconductor |
Description: NPN DIGITAL TRANSISTOR (WITH BUI Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
товар відсутній |