DTC123EEBTL Rohm Semiconductor

Description: TRANS PREBIAS NPN 50V 0.1A EMT3F, Resistor - Emitter Base (R2): 2.2 kOhms, Resistors Included: R1 and R2, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Not For New Designs, Supplier Device Package: EMT3F (SOT-416FL), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V, Current - Collector Cutoff (Max): 500nA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-89, SOT-490, Packaging: Tape & Reel (TR).