DTD543XMT2L Rohm Semiconductor

Description: TRANS PREBIAS NPN 12V 0.5A VMT3, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 260 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 12 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: VMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).