DTD743EMT2L Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 30V 0.2A VMT3
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
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Технічний опис DTD743EMT2L Rohm Semiconductor
Description: TRANS PREBIAS NPN 30V 0.2A VMT3, Supplier Device Package: VMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 260 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 200 mA.
Інші пропозиції DTD743EMT2L
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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DTD743EMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 30V 0.2A VMT3 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 260 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DTD743EMT2L | ROHM Semiconductor |
Digital Transistors TRANSISTOR |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. |
| DTD743EMT2L |
|
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 30V 0.2A VMT3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 30V 0.2A VMT3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| DTD743EMT2L |
|
Виробник: ROHM Semiconductor
Digital Transistors TRANSISTOR
Digital Transistors TRANSISTOR
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.