DTDG23YPT100 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 60V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Frequency - Transition: 80 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
| Кількість | Ціна |
|---|---|
| 4+ | 81.36 грн |
| 10+ | 48.89 грн |
| 100+ | 32.12 грн |
| 500+ | 23.36 грн |
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Технічний опис DTDG23YPT100 Rohm Semiconductor
Description: TRANS PREBIAS NPN 60V 1A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V, Supplier Device Package: MPT3, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.5 W, Frequency - Transition: 80 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 22 kOhms, Resistors Included: R1 and R2.
Інші пропозиції DTDG23YPT100 за ціною від 15.58 грн до 85.19 грн
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DTDG23YPT100 | Виробник : ROHM Semiconductor |
Digital Transistors NPN 60V 1A |
на замовлення 1935 шт: термін постачання 21-30 дні (днів) |
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DTDG23YPT100 | Виробник : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 60V 1A MPT3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W Frequency - Transition: 80 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |