DXTN10060DFJBWQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 4A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
| Кількість | Ціна |
|---|---|
| 3000+ | 12.13 грн |
| 6000+ | 10.93 грн |
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Технічний опис DXTN10060DFJBWQ-7 Diodes Incorporated
Description: TRANS NPN 60V 4A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V, Frequency - Transition: 125MHz, Supplier Device Package: W-DFN2020-3 (Type A), Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.8 W.
Інші пропозиції DXTN10060DFJBWQ-7 за ціною від 9.85 грн до 34.02 грн
| Фото | Назва | Виробник | Інформація |
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DXTN10060DFJBWQ-7 | Diodes Incorporated |
Bipolar Transistors - BJT SS Low Sat Transist |
на замовлення 2441 шт: термін постачання 21-30 дні (днів) |
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DXTN10060DFJBWQ-7 | Diodes Incorporated |
Description: TRANS NPN 60V 4A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V Frequency - Transition: 125MHz Supplier Device Package: W-DFN2020-3 (Type A) Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W |
на замовлення 11445 шт: термін постачання 21-31 дні (днів) |
|
| DXTN10060DFJBWQ-7 |
|
Виробник: Diodes Incorporated
Bipolar Transistors - BJT SS Low Sat Transist
Bipolar Transistors - BJT SS Low Sat Transist
на замовлення 2441 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.97 грн |
| 12+ | 28.79 грн |
| 100+ | 17.44 грн |
| 500+ | 13.64 грн |
| 1000+ | 11.11 грн |
| 3000+ | 9.85 грн |
| DXTN10060DFJBWQ-7 |
|
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 4A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
Description: TRANS NPN 60V 4A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
на замовлення 11445 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.02 грн |
| 11+ | 28.27 грн |
| 100+ | 21.11 грн |
| 500+ | 15.57 грн |
| 1000+ | 12.03 грн |