
DXTN58100CFDB-7 Diodes Incorporated

Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 690 mW
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
8+ | 39.69 грн |
10+ | 32.11 грн |
100+ | 22.33 грн |
500+ | 16.36 грн |
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Технічний опис DXTN58100CFDB-7 Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: U-DFN2020-3 (Type B), Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 690 mW.
Інші пропозиції DXTN58100CFDB-7
Фото | Назва | Виробник | Інформація |
Доступність |
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DXTN58100CFDB-7 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: U-DFN2020-3 (Type B) Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 690 mW |
товару немає в наявності |