DXTP3C100PSQ-13 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 7+ | 47.34 грн |
| 10+ | 39.79 грн |
| 100+ | 24.05 грн |
| 500+ | 18.78 грн |
| 1000+ | 15.33 грн |
| 2500+ | 13.08 грн |
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Технічний опис DXTP3C100PSQ-13 Diodes Incorporated
Description: DIODES INC. - DXTP3C100PSQ-13 - Bipolarer Einzeltransistor (BJT), PNP, 100 V, 3 A, 5 W, PowerDI5060, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, rohsCompliant: Y-EX, DC-Stromverstärkung (hFE), min.: 10hFE, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: MSL 3 - 168 Stunden, usEccn: EAR99, euEccn: NLR, Verlustleistung: 5W, Bauform - Transistor: PowerDI5060, Dauerkollektorstrom: 3A, Anzahl der Pins: 8Pin(s), Produktpalette: DXT Series, Kollektor-Emitter-Spannung, max.: 100V, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: PNP, Übergangsfrequenz: 125MHz, Betriebstemperatur, max.: 175°C, SVHC: Lead (25-Jun-2025).
Інші пропозиції DXTP3C100PSQ-13 за ціною від 15.57 грн до 61.71 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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DXTP3C100PSQ-13 | Diodes Incorporated |
Description: TRANS PNP 100V 3A POWERDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V Frequency - Transition: 125MHz Supplier Device Package: PowerDI5060-8 (Type Q) Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W Qualification: AEC-Q101 |
на замовлення 1353 шт: термін постачання 21-31 дні (днів) |
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| DXTP3C100PSQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 100V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Qualification: AEC-Q101
Description: TRANS PNP 100V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Qualification: AEC-Q101
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.71 грн |
| 10+ | 36.87 грн |
| 100+ | 23.96 грн |
| 500+ | 17.26 грн |
| 1000+ | 15.57 грн |




