DXTP78030DFGQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 315MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2.4 W
Qualification: AEC-Q101
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Технічний опис DXTP78030DFGQ-7 Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP, Operating Temperature: -55°C ~ 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A, Current - Collector Cutoff (Max): 300nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V, Frequency - Transition: 315MHz, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Current - Collector (Ic) (Max): 6.5 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 2.4 W, Qualification: AEC-Q101.
Інші пропозиції DXTP78030DFGQ-7 за ціною від 16.75 грн до 65.87 грн
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DXTP78030DFGQ-7 | Diodes Incorporated |
Description: PWR LOW SAT TRANSISTOR POWERDI33 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A Current - Collector Cutoff (Max): 300nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 315MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Current - Collector (Ic) (Max): 6.5 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 2.4 W Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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DXTP78030DFGQ-7 | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K |
на замовлення 1540 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DXTP78030DFGQ-7 |
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Виробник: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 315MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2.4 W
Qualification: AEC-Q101
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 315MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2.4 W
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.87 грн |
| 10+ | 39.47 грн |
| 100+ | 25.71 грн |
| 500+ | 18.54 грн |
| 1000+ | 16.75 грн |
| DXTP78030DFGQ-7 |
|
Виробник: Diodes Incorporated
Bipolar Transistors - BJT Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Bipolar Transistors - BJT Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
на замовлення 1540 шт:
термін постачання 21-30 дні (днів)