DZ435N40KHPSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4KV 700A MODULE
Packaging: Tray
Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io): 700A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
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Технічний опис DZ435N40KHPSA1 Infineon Technologies
Description: DIODE GEN PURP 4KV 700A MODULE, Packaging: Tray, Current - Reverse Leakage @ Vr: 50 mA @ 4000 V, Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A, Voltage - DC Reverse (Vr) (Max): 4000 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: Module, Current - Average Rectified (Io): 700A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Module.