E3M0160120D Wolfspeed, Inc.
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): -8V, +19V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tray
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Технічний опис E3M0160120D Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-247, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): -8V, +19V, Drive Voltage (Max Rds On, Min Rds On): 15V, Grade: Automotive, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 3.6V @ 2.33mA, Power Dissipation (Max): 103W (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V, Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tray.
Інші пропозиції E3M0160120D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| E3M0160120D | Виробник : Wolfspeed |
MOSFET SiC, MOSFET, 160mohm, 1200V, TO-247-3, Automotive, Gen 3 |
товару немає в наявності |