E3M0160120D Wolfspeed
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 979.95 грн |
| 10+ | 719.82 грн |
| 120+ | 521.12 грн |
| 510+ | 464.69 грн |
| 1020+ | 434.64 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
31-40 дні (днів)
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Технічний опис E3M0160120D Wolfspeed
Description: SIC, MOSFET, 160M, 1200V, TO-247, Packaging: Tray, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 2.33mA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): -8V, +19V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V, Qualification: AEC-Q101.
Інші пропозиції E3M0160120D
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
E3M0160120D | Wolfspeed, Inc. |
 Description: SIC, MOSFET, 160M, 1200V, TO-247Packaging: Tray Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 2.33mA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): -8V, +19V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| E3M0160120D |
|
Виробник: Wolfspeed, Inc.
Description: SIC, MOSFET, 160M, 1200V, TO-247
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
Description: SIC, MOSFET, 160M, 1200V, TO-247
Packaging: Tray
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): -8V, +19V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.