E4D02120E-TR Wolfspeed, Inc.
Виробник: Wolfspeed, Inc.Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 2674 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 175.05 грн |
| 10+ | 139.84 грн |
| 100+ | 111.35 грн |
| 500+ | 88.42 грн |
| 1000+ | 75.02 грн |
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Технічний опис E4D02120E-TR Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2, Packaging: Tape & Reel (TR), Package / Case: TO-252-2, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 153pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252-2, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Qualification: AEC-Q101.
Інші пропозиції E4D02120E-TR
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E4D02120E-TR | Виробник : Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 8A TO252-2 Packaging: Tape & Reel (TR) Package / Case: TO-252-2 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 153pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
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