E4D20120A Wolfspeed, Inc.
Виробник: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54.5A TO220
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 54.5A
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Grade: Automotive
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1502.55 грн |
| 50+ | 1139.15 грн |
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Технічний опис E4D20120A Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 54.5A TO220, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2, Current - Average Rectified (Io): 54.5A, Capacitance @ Vr, F: 1500pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Grade: Automotive.
