Технічний опис E4M0015075J2-TR Wolfspeed
Description: MOSFETS 5128 PF 554W 3.8V 180 NC, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 156A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V, Power Dissipation (Max): 554W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 15.4mA, Supplier Device Package: TO-263-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V, Qualification: AEC-Q101.
Інші пропозиції E4M0015075J2-TR за ціною від 2031.09 грн до 2872.58 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| E4M0015075J2-TR | Wolfspeed, Inc. |
 Description: MOSFETS 5128 PF 554W 3.8V 180 NCPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 156A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V Power Dissipation (Max): 554W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 15.4mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V Qualification: AEC-Q101 |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
|
| E4M0015075J2-TR |
|
Виробник: Wolfspeed, Inc.
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
Description: MOSFETS 5128 PF 554W 3.8V 180 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Power Dissipation (Max): 554W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 15.4mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5128 pF @ 500 V
Qualification: AEC-Q101
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2872.58 грн |
| 10+ | 2254.96 грн |
| 100+ | 2031.09 грн |