EC4401C-TL Sanyo

Description: N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Part Status: Active, Supplier Device Package: 4-ECSP1008, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V, Current - Continuous Drain (Id) @ 25°C: 150mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-UFDFN, Packaging: Bulk.