Технічний опис ECH8309-TL-H ON Semiconductor
Description: MOSFET P-CH 12V 9.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Supplier Device Package: 8-ECH, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V.
Інші пропозиції ECH8309-TL-H за ціною від 27.99 грн до 27.99 грн
| Фото | Назва | Виробник | Інформація |
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| ECH8309-TL-H | Виробник : onsemi |
 Description: P-CHANNEL POWER MOSFET -12V, -9.Packaging: Bulk Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V |
на замовлення 142845 шт: термін постачання 21-31 дні (днів) |
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ECH8309-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 12V 9.5A 8ECH Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V |
товару немає в наявності |
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ECH8309-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 12V 9.5A 8ECH Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V |
товару немає в наявності |