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Технічний опис ECH8309-TL-H ON Semiconductor
Description: MOSFET P-CH 12V 9.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Supplier Device Package: 8-ECH, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V.
Інші пропозиції ECH8309-TL-H за ціною від 27.89 грн до 27.89 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||
|---|---|---|---|---|---|---|---|
| ECH8309-TL-H | onsemi |
 Description: P-CHANNEL POWER MOSFET -12V, -9.Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-ECH Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Bulk |
на замовлення 142845 шт: термін постачання 21-31 дні (днів) |
|
| ECH8309-TL-H |
|
Виробник: onsemi
Description: P-CHANNEL POWER MOSFET -12V, -9.
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-ECH
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Bulk
Description: P-CHANNEL POWER MOSFET -12V, -9.
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-ECH
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Bulk
на замовлення 142845 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 754+ | 27.89 грн |