ECH8315-TL-H onsemi
Виробник: onsemiDescription: MOSFET P-CH 30V 7.5A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
на замовлення 872587 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1057+ | 20.9 грн |
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Технічний опис ECH8315-TL-H onsemi
Description: MOSFET P-CH 30V 7.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Supplier Device Package: 8-ECH, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V.
Інші пропозиції ECH8315-TL-H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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ECH8315-TL-H | Виробник : onsemi |
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ECH8315-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 30V 7.5A 8ECH Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V |
товар відсутній |
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ECH8315-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 30V 7.5A 8ECH Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V |
товар відсутній |