ECH8657-TL-H onsemi
Виробник: onsemiDescription: MOSFET 2N-CH 35V 4.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.33 грн |
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Технічний опис ECH8657-TL-H onsemi
Description: MOSFET 2N-CH 35V 4.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 35V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V, Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, FET Feature: Logic Level Gate, Supplier Device Package: 8-ECH.
Інші пропозиції ECH8657-TL-H за ціною від 16.57 грн до 52.96 грн
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ECH8657-TL-H | Виробник : onsemi |
Description: MOSFET 2N-CH 35V 4.5A 8ECH Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
на замовлення 3013 шт: термін постачання 21-31 дні (днів) |
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ECH8657-TL-H | Виробник : onsemi |
MOSFET SWITCHING DEVICE |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| ECH8657-TL-H | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 35V; 4.5A; Idm: 30A; 1.5W; ECH8 Mounting: SMD Drain-source voltage: 35V Drain current: 4.5A On-state resistance: 59mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Case: ECH8 кількість в упаковці: 1 шт |
товар відсутній |
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| ECH8657-TL-H | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 35V; 4.5A; Idm: 30A; 1.5W; ECH8 Mounting: SMD Drain-source voltage: 35V Drain current: 4.5A On-state resistance: 59mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Case: ECH8 |
товар відсутній |