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Технічний опис ECH8663R-TL-H onsemi
Description: MOSFET 2N-CH 30V 8A 8ECH, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR), Supplier Device Package: 8-ECH, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V, Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual).
Інші пропозиції ECH8663R-TL-H
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
ECH8663R-TL-H | onsemi |
 Description: MOSFET 2N-CH 30V 8A 8ECHMounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) Supplier Device Package: 8-ECH FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V Power - Max: 1.5W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
ECH8663R-TL-H | onsemi |
Description: MOSFET 2N-CH 30V 8A 8ECH Supplier Device Package: 8-ECH FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V Power - Max: 1.5W Technology: MOSFET (Metal Oxide) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) Operating Temperature: 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. |
| ECH8663R-TL-H |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 8A 8ECH
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-ECH
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 30V 8A 8ECH
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-ECH
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ECH8663R-TL-H |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 8A 8ECH
Supplier Device Package: 8-ECH
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Operating Temperature: 150°C (TJ)
Description: MOSFET 2N-CH 30V 8A 8ECH
Supplier Device Package: 8-ECH
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Operating Temperature: 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.