EFC3J018NUZTDG onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 20V 23A 6WLCSP
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-WLCSP (1.77x3.05)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
| Кількість | Ціна |
|---|---|
| 5000+ | 30.05 грн |
| 10000+ | 27.81 грн |
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Технічний опис EFC3J018NUZTDG onsemi
Description: MOSFET 2N-CH 20V 23A 6WLCSP, FET Feature: Logic Level Gate, 2.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 2.5W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 6-XFBGA, WLCSP, Packaging: Tape & Reel (TR), Supplier Device Package: 6-WLCSP (1.77x3.05), Vgs(th) (Max) @ Id: 1.3V @ 1mA.
Інші пропозиції EFC3J018NUZTDG за ціною від 26.51 грн до 120.26 грн
| Фото | Назва | Виробник | Інформація |
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EFC3J018NUZTDG | onsemi |
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN |
на замовлення 52067 шт: термін постачання 21-30 дні (днів) |
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EFC3J018NUZTDG | onsemi |
Description: MOSFET 2N-CH 20V 23A 6WLCSP Supplier Device Package: 6-WLCSP (1.77x3.05) Vgs(th) (Max) @ Id: 1.3V @ 1mA FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 2.5W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 19698 шт: термін постачання 21-31 дні (днів) |
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| EFC3J018NUZTDG |
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Виробник: onsemi
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
на замовлення 52067 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 119.79 грн |
| 10+ | 75.13 грн |
| 100+ | 43.39 грн |
| 500+ | 34.11 грн |
| 1000+ | 28.62 грн |
| 2500+ | 28.48 грн |
| 5000+ | 26.51 грн |
| EFC3J018NUZTDG |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 23A 6WLCSP
Supplier Device Package: 6-WLCSP (1.77x3.05)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 23A 6WLCSP
Supplier Device Package: 6-WLCSP (1.77x3.05)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 19698 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 120.26 грн |
| 10+ | 73.21 грн |
| 100+ | 47.05 грн |
| 500+ | 34.84 грн |
| 1000+ | 29.54 грн |
| 2000+ | 29.31 грн |