Технічний опис EGF1THE3/5CA Vishay Semiconductors
Description: DIODE GEN PURP 1.3KV 1A DO214BA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 5 µA @ 1300 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1300 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214BA (GF1), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214BA.
Інші пропозиції EGF1THE3/5CA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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EGF1THE3/5CA | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1.3KV 1A DO214BAPackaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1300 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214BA |
товару немає в наявності |
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EGF1THE3/5CA | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.3KV 1A DO214BA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1300 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Cut Tape (CT) |
товару немає в наявності |