
EGL34A-E3/98 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 50V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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Технічний опис EGL34A-E3/98 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 500MA DO213AA, Packaging: Tape & Reel (TR), Package / Case: DO-213AA (Glass), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 500mA, Supplier Device Package: DO-213AA (GL34), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA, Current - Reverse Leakage @ Vr: 5 µA @ 50 V.
Інші пропозиції EGL34A-E3/98
Фото | Назва | Виробник | Інформація |
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EGL34A-E3/98 | Виробник : Vishay General Semiconductor |
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