Технічний опис EGL34B Diotec Semiconductor
Description: DIODE GP 100V 500MA DO213AA, Packaging: Tape & Reel (TR), Package / Case: DO-213AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 500mA, Supplier Device Package: DO-213AA (MINIMELF), Operating Temperature - Junction: -50°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Інші пропозиції EGL34B
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
EGL34B | Diotec Semiconductor |
Description: DIODE GP 100V 500MA DO213AAPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (MINIMELF) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
EGL34B | Diotec Semiconductor |
Description: DIODE GEN PURP 100V 0.5A DO213AAPackaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (MINIMELF) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| EGL34B |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE GP 100V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GP 100V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| EGL34B |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 100V 0.5A DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 0.5A DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.




