EGL34BHE3_A/H Vishay General Semiconductor - Diodes Division


egl34.pdf Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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Description: DIODE GP 100V 500MA DO213AA, Packaging: Tape & Reel (TR), Package / Case: DO-213AA (Glass), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 7pF @ 4V, 1MHz, Current - Average Rectified (Io): 500mA, Supplier Device Package: DO-213AA (GL34), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Qualification: AEC-Q101.

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EGL34BHE3_A/H EGL34BHE3_A/H Виробник : Vishay General Semiconductor egl34.pdf Rectifiers 0.5A,100V,50NS AEC-Q101 Qualified
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