EGL41B-E3/97 Vishay Semiconductors

Description: DIODE GEN PURP 100V 1A DO213AB, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-213AB, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AB, MELF (Glass), Packaging: Tape & Reel (TR).