Технічний опис EGP30D-E3/73 Vishay Semiconductors
Description: DIODE STANDARD 200V 3A GP20, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: GP20, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AA, DO-27, Axial, Packaging: Tape & Box (TB).
Інші пропозиції EGP30D-E3/73
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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EGP30D-E3/73 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 200V 3A GP20Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: GP20 Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |