EM6M1T2R Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N/P-CH 30V/20V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: EMT6
Part Status: Not For New Designs
на замовлення 7965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 33.69 грн |
| 10+ | 27.68 грн |
| 100+ | 19.25 грн |
| 500+ | 14.1 грн |
| 1000+ | 11.46 грн |
| 2000+ | 10.25 грн |
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Технічний опис EM6M1T2R Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA, Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V, Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, FET Feature: Logic Level Gate, Supplier Device Package: EMT6, Part Status: Not For New Designs.
Інші пропозиції EM6M1T2R
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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EM6M1T2R | Виробник : ROHM Semiconductor |
MOSFET Sm Signal, Sw MOSFET N/P Ch, -20V, 0.15A |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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EM6M1T2R | Виробник : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V/20V EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V FET Feature: Logic Level Gate Supplier Device Package: EMT6 Part Status: Not For New Designs |
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