EM6OE08NW9A-07H Etron Technology, Inc.
Виробник: Etron Technology, Inc.Description: IC DRAM 4GBIT POD 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.333 GHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x10.6)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: POD
Access Time: 18 ns
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 593.98 грн |
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Технічний опис EM6OE08NW9A-07H Etron Technology, Inc.
Description: IC DRAM 4GBIT POD 78FBGA, Packaging: Tape & Reel (TR), Package / Case: 78-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 95°C (TC), Voltage - Supply: 1.14V ~ 1.26V, Technology: SDRAM - DDR4, Clock Frequency: 1.333 GHz, Memory Format: DRAM, Supplier Device Package: 78-FBGA (7.5x10.6), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: POD, Access Time: 18 ns, Memory Organization: 512M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції EM6OE08NW9A-07H
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EM6OE08NW9A-07H | Виробник : Etron Technology, Inc. |
Description: IC DRAM 4GBIT POD 78FBGA Packaging: Cut Tape (CT) Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.333 GHz Memory Format: DRAM Supplier Device Package: 78-FBGA (7.5x10.6) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: POD Access Time: 18 ns Memory Organization: 512M x 8 DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |