EMD29T2R Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 120mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 1kOhms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
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Технічний опис EMD29T2R Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 120mW, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 12V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V, Frequency - Transition: 250MHz, 260MHz, Resistor - Base (R1): 1kOhms, 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: EMT6.
Інші пропозиції EMD29T2R за ціною від 8.36 грн до 38.83 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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EMD29T2R | Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP EMT6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 120mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V Frequency - Transition: 250MHz, 260MHz Resistor - Base (R1): 1kOhms, 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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| EMD29T2R |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 120mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 1kOhms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Description: TRANS PREBIAS 1NPN 1PNP EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 120mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 1kOhms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.83 грн |
| 14+ | 22.96 грн |
| 100+ | 14.64 грн |
| 500+ | 10.36 грн |
| 1000+ | 9.27 грн |
| 2000+ | 8.36 грн |