EMF18XV6T5G onsemi

Description: TRANS PREBIAS 1NPN 1PNP SOT-563, Supplier Device Package: SOT-563, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 47kOhms, Frequency - Transition: 140MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 1mA, 6V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA, Voltage - Collector Emitter Breakdown (Max): 50V, 60V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).