EMG11T2R Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT5
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Технічний опис EMG11T2R Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5, Packaging: Tape & Reel (TR), Package / Case: 6-SMD (5 Leads), Flat Lead, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT5.
Інші пропозиції EMG11T2R за ціною від 7.51 грн до 30.61 грн
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EMG11T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT5 Supplier Device Package: EMT5 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Packaging: Cut Tape (CT) |
на замовлення 15795 шт: термін постачання 21-31 дні (днів) |
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EMG11T2R | ROHM Semiconductor |
Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA |
на замовлення 7997 шт: термін постачання 21-30 дні (днів) |
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| EMG11T2R |
|
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Supplier Device Package: EMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Supplier Device Package: EMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
на замовлення 15795 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.51 грн |
| 14+ | 22.81 грн |
| 100+ | 15.53 грн |
| 500+ | 10.93 грн |
| 1000+ | 8.20 грн |
| 2000+ | 7.51 грн |
| EMG11T2R |
|
Виробник: ROHM Semiconductor
Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
на замовлення 7997 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.61 грн |
| 13+ | 24.93 грн |
| 100+ | 14.77 грн |
| 500+ | 11.11 грн |