EMG2T2R Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT5
Part Status: Active
на замовлення 2855 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.02 грн |
| 13+ | 22.14 грн |
| 100+ | 15.05 грн |
| 500+ | 10.59 грн |
| 1000+ | 7.95 грн |
| 2000+ | 7.28 грн |
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Технічний опис EMG2T2R Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5, Packaging: Tape & Reel (TR), Package / Case: 6-SMD (5 Leads), Flat Lead, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT5, Part Status: Active.
Інші пропозиції EMG2T2R
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| EMG2T2R | Виробник : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 47kΩ Mounting: SMD Case: SOT553 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 68 Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.15W кількість в упаковці: 5 шт |
товар відсутній |
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EMG2T2R | Виробник : Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT5 Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Lead Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT5 Part Status: Active |
товар відсутній |
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EMG2T2R | Виробник : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA |
товар відсутній |
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| EMG2T2R | Виробник : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 47kΩ Mounting: SMD Case: SOT553 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 68 Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.15W |
товар відсутній |